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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > ZXTS1000NE6TA
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177035ZXTS1000NE6TA ImageDiodes Incorporated

ZXTS1000NE6TA

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Specifications
  • Part Number
    ZXTS1000NE6TA
  • Manufacturer/Brand
    Diodes Incorporated
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 12V 1.25A SOT23-6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    ZXTS1000NE6TA.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Vce Saturation (Max) @ Ib, Ic
    240mV @ 100mA, 1.25A
  • Transistor Type
    PNP + Diode (Isolated)
  • Supplier Device Package
    SOT-23-6
  • Series
    -
  • Power - Max
    885mW
  • Packaging
    Original-Reel®
  • Package / Case
    SOT-23-6
  • Other Names
    ZXTS1000NE6TADKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    220MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP + Diode (Isolated) 12V 1.25A 220MHz 885mW Surface Mount SOT-23-6
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 500mA, 2V
  • Current - Collector Cutoff (Max)
    10nA
  • Current - Collector (Ic) (Max)
    1.25A
  • Base Part Number
    ZXTS1000

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