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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > EPC2107ENGRT
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4991136EPC2107ENGRT ImageEPC

EPC2107ENGRT

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Specifications
  • Part Number
    EPC2107ENGRT
  • Manufacturer/Brand
    EPC
  • Stock Quantity
    In stock
  • Description
    TRANS GAN 3N-CH 100V BUMPED DIE
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    EPC2107ENGRT.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.5V @ 100µA, 2.5V @ 20µA
  • Supplier Device Package
    9-BGA (1.35x1.35)
  • Series
    eGaN®
  • Rds On (Max) @ Id, Vgs
    320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
  • Power - Max
    -
  • Packaging
    Original-Reel®
  • Package / Case
    9-VFBGA
  • Other Names
    917-EPC2107ENGRDKR
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    16pF @ 50V, 7pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    0.16nC @ 5V, 0.044nC @ 5V
  • FET Type
    3 N-Channel (Half Bridge + Synchronous Bootstrap)
  • FET Feature
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35)
  • Current - Continuous Drain (Id) @ 25°C
    1.7A, 500mA

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