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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > EPC2104ENG
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4461705EPC2104ENG ImageEPC

EPC2104ENG

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Reference Price(In US Dollars)

In stock
100+
$10.625
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Specifications
  • Part Number
    EPC2104ENG
  • Manufacturer/Brand
    EPC
  • Stock Quantity
    In stock
  • Description
    TRANS GAN 2N-CH 100V BUMPED DIE
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    EPC2104ENG.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 5.5mA
  • Supplier Device Package
    Die
  • Series
    eGaN®
  • Rds On (Max) @ Id, Vgs
    6.3 mOhm @ 20A, 5V
  • Power - Max
    -
  • Packaging
    Tray
  • Package / Case
    Die
  • Other Names
    917-EPC2104ENG
    EPC2104ENGRH4
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    800pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    7nC @ 5V
  • FET Type
    2 N-Channel (Half Bridge)
  • FET Feature
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    Mosfet Array 2 N-Channel (Half Bridge) 100V 23A Surface Mount Die
  • Current - Continuous Drain (Id) @ 25°C
    23A

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