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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > EPC2101ENG
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3779969EPC2101ENG ImageEPC

EPC2101ENG

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Reference Price(In US Dollars)

In stock
10+
$10.92
30+
$10.101
100+
$9.282
250+
$8.463
500+
$7.917
Inquiry Online
Specifications
  • Part Number
    EPC2101ENG
  • Manufacturer/Brand
    EPC
  • Stock Quantity
    In stock
  • Description
    TRANS GAN 2N-CH 60V BUMPED DIE
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    EPC2101ENG.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.5V @ 2mA
  • Supplier Device Package
    Die
  • Series
    eGaN®
  • Rds On (Max) @ Id, Vgs
    11.5 mOhm @ 20A, 5V
  • Power - Max
    -
  • Packaging
    Tray
  • Package / Case
    Die
  • Other Names
    917-EPC2101ENG
    EPC2101ENGR_H5
    EPC2101ENGRH5
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    300pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    2.7nC @ 5V
  • FET Type
    2 N-Channel (Half Bridge)
  • FET Feature
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    Mosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A Surface Mount Die
  • Current - Continuous Drain (Id) @ 25°C
    9.5A, 38A

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