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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > EPC2102
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913572EPC2102 ImageEPC

EPC2102

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Reference Price(In US Dollars)

In stock
500+
$5.454
Inquiry Online
Specifications
  • Part Number
    EPC2102
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANS GAN SYMMETRICAL HALF BRIDG
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.5V @ 7mA
  • Supplier Device Package
    Die
  • Series
    eGaN®
  • Rds On (Max) @ Id, Vgs
    4.4 mOhm @ 20A, 5V
  • Power - Max
    -
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    Die
  • Other Names
    917-1182-2
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    14 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    830pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    6.8nC @ 5V
  • FET Type
    2 N-Channel (Half Bridge)
  • FET Feature
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    Mosfet Array 2 N-Channel (Half Bridge) 60V 23A Surface Mount Die
  • Current - Continuous Drain (Id) @ 25°C
    23A
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Description: MOSFET 2 N-CHANNEL 60V 23A DIE

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Description: TRANS GAN 2N-CH 80V BUMPED DIE

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Description: TRANS GAN ASYMMETRICAL HALF BRID

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Description: TRANS GAN 100V DIE CU PILLAR

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Description: TRANS GAN ASYMMETRICAL HALF BRID

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Description: MOSFET 2 N-CH 30V 9.5A/38A DIE

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Description: TRANS GAN SYM HALF BRDG 80V

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EPC2104ENGRT

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Description: MOSFET 2NCH 100V 23A DIE

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Description: TRANS GAN ASYMMETRICAL HALF BRID

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Description: TRANS GAN 350V BUMPED DIE

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In stock
EPC2105ENG

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Description: TRANS GAN 2N-CH 80V BUMPED DIE

Manufacturers: EPC
In stock
EPC2102ENG

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Description: TRANS GAN 2N-CH 60V BUMPED DIE

Manufacturers: EPC
In stock
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Description: TRANS GAN 40V BUMPED DIE

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In stock

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