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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFD9010PBF
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3057012IRFD9010PBF ImageElectro-Films (EFI) / Vishay

IRFD9010PBF

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Reference Price(In US Dollars)

In stock
1+
$1.50
10+
$1.327
100+
$1.049
500+
$0.813
1000+
$0.642
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Specifications
  • Part Number
    IRFD9010PBF
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 50V 1.1A 4-DIP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IRFD9010PBF.pdf
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    4-DIP, Hexdip, HVMDIP
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    500 mOhm @ 580mA, 10V
  • Power Dissipation (Max)
    1W (Tc)
  • Packaging
    Tube
  • Package / Case
    4-DIP (0.300", 7.62mm)
  • Other Names
    *IRFD9010PBF
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    16 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    240pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    11nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    50V
  • Detailed Description
    P-Channel 50V 1.1A (Tc) 1W (Tc) Through Hole 4-DIP, Hexdip, HVMDIP
  • Current - Continuous Drain (Id) @ 25°C
    1.1A (Tc)

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