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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > S1JHE3_A/H
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6645541S1JHE3_A/H ImageElectro-Films (EFI) / Vishay

S1JHE3_A/H

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Reference Price(In US Dollars)

In stock
1800+
$0.091
3600+
$0.079
5400+
$0.071
12600+
$0.064
45000+
$0.06
90000+
$0.053
Inquiry Online
Specifications
  • Part Number
    S1JHE3_A/H
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    DIODE GEN PURP 600V 1A DO214AC
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Voltage - Forward (Vf) (Max) @ If
    1.1V @ 1A
  • Voltage - DC Reverse (Vr) (Max)
    600V
  • Supplier Device Package
    DO-214AC (SMA)
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Series
    -
  • Reverse Recovery Time (trr)
    1.8µs
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    DO-214AC, SMA
  • Other Names
    S1JHE3_A/HGITR
  • Operating Temperature - Junction
    -55°C ~ 150°C
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Diode Type
    Standard
  • Detailed Description
    Diode Standard 600V 1A Surface Mount DO-214AC (SMA)
  • Current - Reverse Leakage @ Vr
    1µA @ 600V
  • Current - Average Rectified (Io)
    1A
  • Capacitance @ Vr, F
    12pF @ 4V, 1MHz
  • Base Part Number
    S1J
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Description: DIODE GEN PURP 600V 1A SUB SMA

Manufacturers: TSC (Taiwan Semiconductor)
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Description: DIODE GEN PURP 600V 1A DO214AC

Manufacturers: TSC (Taiwan Semiconductor)
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Description: DIODE, 1A, 600V, SOD-128

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Description: DIODE GEN PURP 600V 1A DO214AC

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Description: DIODE GEN PURP 600V 1A DO214AC

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Description: DIODE GEN PURP 600V 1A DO214AC

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Description: DIODE GEN PURP 600V 1A SUB SMA

Manufacturers: TSC (Taiwan Semiconductor)
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