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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI1078X-T1-GE3
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6354314SI1078X-T1-GE3 ImageElectro-Films (EFI) / Vishay

SI1078X-T1-GE3

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Reference Price(In US Dollars)

In stock
1+
$0.48
10+
$0.373
100+
$0.256
500+
$0.175
1000+
$0.132
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Specifications
  • Part Number
    SI1078X-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 30V 1.02A SOT563F
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI1078X-T1-GE3.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Vgs (Max)
    ±12V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    142 mOhm @ 1A, 10V
  • Power Dissipation (Max)
    240mW (Tc)
  • Packaging
    Original-Reel®
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    SI1078X-T1-GE3DKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    110pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    3nC @ 4.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    N-Channel 30V 1.02A (Tc) 240mW (Tc) Surface Mount
  • Current - Continuous Drain (Id) @ 25°C
    1.02A (Tc)

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