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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI1070X-T1-GE3
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6835621SI1070X-T1-GE3 ImageElectro-Films (EFI) / Vishay

SI1070X-T1-GE3

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Reference Price(In US Dollars)

In stock
1+
$0.62
10+
$0.521
100+
$0.391
500+
$0.287
1000+
$0.222
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Specifications
  • Part Number
    SI1070X-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 30V 1.2A SOT563F
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI1070X-T1-GE3.pdf
  • Vgs(th) (Max) @ Id
    1.55V @ 250µA
  • Vgs (Max)
    ±12V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SC-89-6
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    99 mOhm @ 1.2A, 4.5V
  • Power Dissipation (Max)
    236mW (Ta)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SOT-563, SOT-666
  • Other Names
    SI1070X-T1-GE3CT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    33 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    385pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    8.3nC @ 5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    N-Channel 30V 236mW (Ta) Surface Mount SC-89-6
  • Current - Continuous Drain (Id) @ 25°C
    -

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