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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI1912EDH-T1-E3
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SI1912EDH-T1-E3

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Specifications
  • Part Number
    SI1912EDH-T1-E3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 20V 1.13A SC70-6
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI1912EDH-T1-E3.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    450mV @ 100µA (Min)
  • Supplier Device Package
    SC-70-6 (SOT-363)
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    280 mOhm @ 1.13A, 4.5V
  • Power - Max
    570mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Other Names
    SI1912EDH-T1-E3TR
    SI1912EDHT1E3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    -
  • Gate Charge (Qg) (Max) @ Vgs
    1nC @ 4.5V
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) 20V 1.13A 570mW Surface Mount SC-70-6 (SOT-363)
  • Current - Continuous Drain (Id) @ 25°C
    1.13A
  • Base Part Number
    SI1912

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