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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI1900DL-T1-GE3
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SI1900DL-T1-GE3

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Reference Price(In US Dollars)

In stock
3000+
$0.237
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Specifications
  • Part Number
    SI1900DL-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET 2 N-CH 30V SC70-6
  • Lead Free Status / RoHS Status
  • Datasheets
    SI1900DL-T1-GE3.pdf
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Supplier Device Package
    SC-70-6
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    480 mOhm @ 590mA, 10V
  • Power - Max
    300mW, 270mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Manufacturer Standard Lead Time
    33 Weeks
  • Input Capacitance (Ciss) (Max) @ Vds
    -
  • Gate Charge (Qg) (Max) @ Vgs
    1.4nC @ 10V
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) 30V 630mA (Ta), 590mA (Ta) 300mW, 270mW Surface Mount SC-70-6
  • Current - Continuous Drain (Id) @ 25°C
    630mA (Ta), 590mA (Ta)

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