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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI2327DS-T1-E3
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SI2327DS-T1-E3

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Specifications
  • Part Number
    SI2327DS-T1-E3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 200V 0.38A SOT23-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI2327DS-T1-E3.pdf
  • Vgs(th) (Max) @ Id
    4.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SOT-23-3 (TO-236)
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    2.35 Ohm @ 500mA, 10V
  • Power Dissipation (Max)
    750mW (Ta)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    SI2327DS-T1-E3CT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    510pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    6V, 10V
  • Drain to Source Voltage (Vdss)
    200V
  • Detailed Description
    P-Channel 200V 380mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
  • Current - Continuous Drain (Id) @ 25°C
    380mA (Ta)

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