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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI3499DV-T1-GE3
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3069324SI3499DV-T1-GE3 ImageElectro-Films (EFI) / Vishay

SI3499DV-T1-GE3

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Reference Price(In US Dollars)

In stock
3000+
$0.467
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Specifications
  • Part Number
    SI3499DV-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 8V 5.3A 6-TSOP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI3499DV-T1-GE3.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    750mV @ 250µA
  • Vgs (Max)
    ±5V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    6-TSOP
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    23 mOhm @ 7A, 4.5V
  • Power Dissipation (Max)
    1.1W (Ta)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Other Names
    SI3499DV-T1-GE3-ND
    SI3499DV-T1-GE3TR
    SI3499DVT1GE3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    33 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Gate Charge (Qg) (Max) @ Vgs
    42nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4.5V
  • Drain to Source Voltage (Vdss)
    8V
  • Detailed Description
    P-Channel 8V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
  • Current - Continuous Drain (Id) @ 25°C
    5.3A (Ta)

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