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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI3585DV-T1-GE3
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6434485SI3585DV-T1-GE3 ImageElectro-Films (EFI) / Vishay

SI3585DV-T1-GE3

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Specifications
  • Part Number
    SI3585DV-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N/P-CH 20V 2A 6-TSOP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI3585DV-T1-GE3.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    600mV @ 250µA (Min)
  • Supplier Device Package
    6-TSOP
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    125 mOhm @ 2.4A, 4.5V
  • Power - Max
    830mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Other Names
    SI3585DV-T1-GE3CT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    -
  • Gate Charge (Qg) (Max) @ Vgs
    3.2nC @ 4.5V
  • FET Type
    N and P-Channel
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    Mosfet Array N and P-Channel 20V 2A, 1.5A 830mW Surface Mount 6-TSOP
  • Current - Continuous Drain (Id) @ 25°C
    2A, 1.5A
  • Base Part Number
    SI3585

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