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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI4501BDY-T1-GE3
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SI4501BDY-T1-GE3

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Reference Price(In US Dollars)

In stock
2500+
$0.267
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Specifications
  • Part Number
    SI4501BDY-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N/P-CH 30V/8V 8SOIC
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI4501BDY-T1-GE3.pdf
  • Vgs(th) (Max) @ Id
    2V @ 250µA
  • Supplier Device Package
    8-SOIC
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    17 mOhm @ 10A, 10V
  • Power - Max
    4.5W, 3.1W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Other Names
    SI4501BDY-T1-GE3TR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    805pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 10V
  • FET Type
    N and P-Channel, Common Drain
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    30V, 8V
  • Detailed Description
    Mosfet Array N and P-Channel, Common Drain 30V, 8V 12A, 8A 4.5W, 3.1W Surface Mount 8-SOIC
  • Current - Continuous Drain (Id) @ 25°C
    12A, 8A

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