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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI5513CDC-T1-E3
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6816837SI5513CDC-T1-E3 ImageElectro-Films (EFI) / Vishay

SI5513CDC-T1-E3

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Reference Price(In US Dollars)

In stock
1+
$0.76
10+
$0.64
100+
$0.48
500+
$0.352
1000+
$0.272
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Specifications
  • Part Number
    SI5513CDC-T1-E3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N/P-CH 20V 4A 1206-8
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI5513CDC-T1-E3.pdf
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    55 mOhm @ 4.3A, 4.5V
  • Power - Max
    3.1W
  • Packaging
    Original-Reel®
  • Package / Case
    8-SMD, Flat Lead
  • Other Names
    SI5513CDC-T1-E3DKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    285pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    4.2nC @ 5V
  • FET Type
    N and P-Channel
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    20V
  • Detailed Description
    Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount
  • Current - Continuous Drain (Id) @ 25°C
    4A, 3.7A

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