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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI6969BDQ-T1-GE3
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2106772SI6969BDQ-T1-GE3 ImageElectro-Films (EFI) / Vishay

SI6969BDQ-T1-GE3

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Specifications
  • Part Number
    SI6969BDQ-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET 2P-CH 12V 4A 8TSSOP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI6969BDQ-T1-GE3.pdf
  • Vgs(th) (Max) @ Id
    800mV @ 250µA
  • Supplier Device Package
    8-TSSOP
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    30 mOhm @ 4.6A, 4.5V
  • Power - Max
    830mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-TSSOP (0.173", 4.40mm Width)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    -
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 4.5V
  • FET Type
    2 P-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    12V
  • Detailed Description
    Mosfet Array 2 P-Channel (Dual) 12V 4A 830mW Surface Mount 8-TSSOP
  • Current - Continuous Drain (Id) @ 25°C
    4A
  • Base Part Number
    SI6969

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