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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI7958DP-T1-GE3
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3705489SI7958DP-T1-GE3 ImageElectro-Films (EFI) / Vishay

SI7958DP-T1-GE3

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Specifications
  • Part Number
    SI7958DP-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 40V 7.2A PPAK SO-8
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SI7958DP-T1-GE3.pdf
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Supplier Device Package
    PowerPAK® SO-8 Dual
  • Series
    TrenchFET®
  • Rds On (Max) @ Id, Vgs
    16.5 mOhm @ 11.3A, 10V
  • Power - Max
    1.4W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    PowerPAK® SO-8 Dual
  • Other Names
    SI7958DP-T1-GE3TR
    SI7958DPT1GE3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    -
  • Gate Charge (Qg) (Max) @ Vgs
    75nC @ 10V
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    40V
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) 40V 7.2A 1.4W Surface Mount PowerPAK® SO-8 Dual
  • Current - Continuous Drain (Id) @ 25°C
    7.2A
  • Base Part Number
    SI7958

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