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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIHU6N65E-GE3
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2781942SIHU6N65E-GE3 ImageElectro-Films (EFI) / Vishay

SIHU6N65E-GE3

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Reference Price(In US Dollars)

In stock
1+
$1.96
10+
$1.771
100+
$1.423
500+
$1.107
1000+
$0.917
Inquiry Online
Specifications
  • Part Number
    SIHU6N65E-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 650V 6A IPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SIHU6N65E-GE3.pdf
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    IPAK (TO-251)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    600 mOhm @ 3A, 10V
  • Power Dissipation (Max)
    78W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Long Leads, IPak, TO-251AB
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    820pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    48nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    N-Channel 650V 7A (Tc) 78W (Tc) Through Hole IPAK (TO-251)
  • Current - Continuous Drain (Id) @ 25°C
    7A (Tc)

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