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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SIR618DP-T1-GE3
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3694202SIR618DP-T1-GE3 ImageElectro-Films (EFI) / Vishay

SIR618DP-T1-GE3

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Reference Price(In US Dollars)

In stock
1+
$1.38
10+
$1.225
100+
$0.968
500+
$0.751
1000+
$0.593
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Specifications
  • Part Number
    SIR618DP-T1-GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 200V 14.2A SO-8
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    SIR618DP-T1-GE3.pdf
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PowerPAK® SO-8
  • Series
    ThunderFET®
  • Rds On (Max) @ Id, Vgs
    95 mOhm @ 8A, 10V
  • Power Dissipation (Max)
    48W (Tc)
  • Packaging
    Original-Reel®
  • Package / Case
    PowerPAK® SO-8
  • Other Names
    SIR618DP-T1-GE3DKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    740pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 7.5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    7.5V, 10V
  • Drain to Source Voltage (Vdss)
    200V
  • Detailed Description
    N-Channel 200V 14.2A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8
  • Current - Continuous Drain (Id) @ 25°C
    14.2A (Tc)

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