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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SQD100N03-3M2L_GE3
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5710157SQD100N03-3M2L_GE3 ImageElectro-Films (EFI) / Vishay

SQD100N03-3M2L_GE3

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Reference Price(In US Dollars)

In stock
2000+
$0.776
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Specifications
  • Part Number
    SQD100N03-3M2L_GE3
  • Manufacturer/Brand
    Electro-Films (EFI) / Vishay
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 30V 100A TO252AA
  • Lead Free Status / RoHS Status
  • Datasheets
    SQD100N03-3M2L_GE3.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-252AA
  • Series
    Automotive, AEC-Q101, TrenchFET®
  • Rds On (Max) @ Id, Vgs
    3.2 mOhm @ 20A, 10V
  • Power Dissipation (Max)
    136W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Input Capacitance (Ciss) (Max) @ Vds
    6316pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    116nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    N-Channel 30V 100A (Tc) 136W (Tc) Surface Mount TO-252AA
  • Current - Continuous Drain (Id) @ 25°C
    100A (Tc)

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