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Home > Products > Integrated Circuits (ICs) > Memory > MB85R256FPF-G-BND-ERE1
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4291739MB85R256FPF-G-BND-ERE1 ImageFujitsu Electronics America, Inc.

MB85R256FPF-G-BND-ERE1

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Specifications
  • Part Number
    MB85R256FPF-G-BND-ERE1
  • Manufacturer/Brand
    Fujitsu Electronics America, Inc.
  • Stock Quantity
    In stock
  • Description
    IC FRAM 256K PARALLEL 28SOP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MB85R256FPF-G-BND-ERE1.pdf
  • Write Cycle Time - Word, Page
    150ns
  • Voltage - Supply
    2.7 V ~ 3.6 V
  • Technology
    FRAM (Ferroelectric RAM)
  • Supplier Device Package
    28-SOP
  • Series
    -
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    28-SOIC (0.295", 7.50mm Width)
  • Operating Temperature
    -40°C ~ 85°C (TA)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Memory Type
    Non-Volatile
  • Memory Size
    256Kb (32K x 8)
  • Memory Interface
    Parallel
  • Memory Format
    FRAM
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 150ns 28-SOP
  • Access Time
    150ns

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