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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 2N7635-GA
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24545352N7635-GA ImageGeneSiC Semiconductor

2N7635-GA

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Specifications
  • Part Number
    2N7635-GA
  • Manufacturer/Brand
    GeneSiC Semiconductor
  • Stock Quantity
    In stock
  • Description
    TRANS SJT 650V 4A TO-257
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    2N7635-GA.pdf
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    -
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Supplier Device Package
    TO-257
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    415 mOhm @ 4A
  • Power Dissipation (Max)
    47W (Tc)
  • Packaging
    Bulk
  • Package / Case
    TO-257-3
  • Other Names
    1242-1146
  • Operating Temperature
    -55°C ~ 225°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    324pF @ 35V
  • FET Type
    -
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Drain to Source Voltage (Vdss)
    650V
  • Detailed Description
    650V 4A (Tc) (165°C) 47W (Tc) Through Hole TO-257
  • Current - Continuous Drain (Id) @ 25°C
    4A (Tc) (165°C)

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