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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GA05JT12-263
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4794922GA05JT12-263 ImageGeneSiC Semiconductor

GA05JT12-263

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Reference Price(In US Dollars)

In stock
1+
$13.20
10+
$11.877
50+
$10.821
100+
$9.765
250+
$8.973
500+
$8.182
Inquiry Online
Specifications
  • Part Number
    GA05JT12-263
  • Manufacturer/Brand
    GeneSiC Semiconductor
  • Stock Quantity
    In stock
  • Description
    TRANS SJT 1200V 15A
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    GA05JT12-263.pdf
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    -
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Supplier Device Package
    D2PAK (7-Lead)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    -
  • Power Dissipation (Max)
    106W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
  • Other Names
    1242-1184
    GA05JT12-220ISO
    GA05JT12220ISO
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    18 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • FET Type
    -
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Drain to Source Voltage (Vdss)
    1200V
  • Detailed Description
    1200V 15A (Tc) 106W (Tc) Surface Mount D2PAK (7-Lead)
  • Current - Continuous Drain (Id) @ 25°C
    15A (Tc)

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