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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GA10JT12-247
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6239119GA10JT12-247 ImageGeneSiC Semiconductor

GA10JT12-247

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Specifications
  • Part Number
    GA10JT12-247
  • Manufacturer/Brand
    GeneSiC Semiconductor
  • Stock Quantity
    In stock
  • Description
    TRANS SJT 1.2KV 10A
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    GA10JT12-247.pdf
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    -
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Supplier Device Package
    TO-247AB
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    140 mOhm @ 10A
  • Power Dissipation (Max)
    170W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Other Names
    1242-1187
    GA10JT12247
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • FET Type
    -
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Drain to Source Voltage (Vdss)
    1200V
  • Detailed Description
    1200V 10A (Tc) 170W (Tc) Through Hole TO-247AB
  • Current - Continuous Drain (Id) @ 25°C
    10A (Tc)

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