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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Arrays > MURT10060R
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2960596MURT10060R ImageGeneSiC Semiconductor

MURT10060R

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Reference Price(In US Dollars)

In stock
50+
$59.119
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Specifications
  • Part Number
    MURT10060R
  • Manufacturer/Brand
    GeneSiC Semiconductor
  • Stock Quantity
    In stock
  • Description
    DIODE ARRAY GP REV POLAR 3TOWER
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.MURT10060R.pdf
    2.MURT10060R.pdf
  • Voltage - Forward (Vf) (Max) @ If
    1.7V @ 100A
  • Voltage - DC Reverse (Vr) (Max)
    600V
  • Supplier Device Package
    Three Tower
  • Speed
    Fast Recovery = 200mA (Io)
  • Series
    -
  • Reverse Recovery Time (trr)
    75ns
  • Packaging
    Bulk
  • Package / Case
    Three Tower
  • Other Names
    MURT10060RGN
  • Operating Temperature - Junction
    -40°C ~ 175°C
  • Mounting Type
    Chassis Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    4 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Diode Type
    Standard, Reverse Polarity
  • Diode Configuration
    -
  • Detailed Description
    Diode Array Standard, Reverse Polarity 600V 100A (DC) Chassis Mount Three Tower
  • Current - Reverse Leakage @ Vr
    25µA @ 50V
  • Current - Average Rectified (Io) (per Diode)
    100A (DC)

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