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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GP1M016A060N
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7044265GP1M016A060N ImageGlobal Power Technologies Group

GP1M016A060N

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Specifications
  • Part Number
    GP1M016A060N
  • Manufacturer/Brand
    SemiQ
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 16A TO3PN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    GP1M016A060N.pdf
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-3PN
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    470 mOhm @ 8A, 10V
  • Power Dissipation (Max)
    312W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-3P-3, SC-65-3
  • Other Names
    1560-1188-1
    1560-1188-1-ND
    1560-1188-5
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3039pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    53nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 16A (Tc) 312W (Tc) Through Hole TO-3PN
  • Current - Continuous Drain (Id) @ 25°C
    16A (Tc)

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