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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > GPA030A135MN-FDR
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2104326GPA030A135MN-FDR ImageGlobal Power Technologies Group

GPA030A135MN-FDR

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Reference Price(In US Dollars)

In stock
2500+
$2.394
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Specifications
  • Part Number
    GPA030A135MN-FDR
  • Manufacturer/Brand
    SemiQ
  • Stock Quantity
    In stock
  • Description
    IGBT 1350V 60A 329W TO3PN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    GPA030A135MN-FDR.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    1350V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 30A
  • Test Condition
    600V, 30A, 5 Ohm, 15V
  • Td (on/off) @ 25°C
    30ns/145ns
  • Switching Energy
    4.4mJ (on), 1.18mJ (off)
  • Supplier Device Package
    TO-3PN
  • Series
    -
  • Reverse Recovery Time (trr)
    450ns
  • Power - Max
    329W
  • Packaging
    Tube
  • Package / Case
    TO-3
  • Other Names
    1560-1221-1
    1560-1221-1-ND
    1560-1221-5
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    300nC
  • Detailed Description
    IGBT Trench Field Stop 1350V 60A 329W Through Hole TO-3PN
  • Current - Collector Pulsed (Icm)
    90A
  • Current - Collector (Ic) (Max)
    60A

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