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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > GSID200A170S3B1
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505999

GSID200A170S3B1

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Reference Price(In US Dollars)

In stock
4+
$155.615
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Specifications
  • Part Number
    GSID200A170S3B1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    SILICON IGBT MODULES
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 200A
  • Supplier Device Package
    D3
  • Series
    Amp+™
  • Power - Max
    1630W
  • Package / Case
    D-3 Module
  • Operating Temperature
    -40°C ~ 150°C
  • NTC Thermistor
    No
  • Mounting Type
    Chassis Mount
  • Manufacturer Standard Lead Time
    8 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Cies) @ Vce
    26nF @ 25V
  • Input
    Standard
  • IGBT Type
    -
  • Detailed Description
    IGBT Module 2 Independent 1200V 400A 1630W Chassis Mount D3
  • Current - Collector Cutoff (Max)
    1mA
  • Current - Collector (Ic) (Max)
    400A
  • Configuration
    2 Independent
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