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Home > Products > Integrated Circuits (ICs) > Memory > 70V3579S6DR
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429835670V3579S6DR ImageIDT (Integrated Device Technology)

70V3579S6DR

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Specifications
  • Part Number
    70V3579S6DR
  • Manufacturer/Brand
    IDT (Renesas Electronics Corporation)
  • Stock Quantity
    In stock
  • Description
    IC SRAM 1.125M PARALLEL 208PQFP
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    1.70V3579S6DR.pdf
    2.70V3579S6DR.pdf
  • Write Cycle Time - Word, Page
    -
  • Voltage - Supply
    3.15 V ~ 3.45 V
  • Technology
    SRAM - Dual Port, Synchronous
  • Supplier Device Package
    208-PQFP (28x28)
  • Series
    -
  • Packaging
    Tray
  • Package / Case
    208-BFQFP
  • Other Names
    IDT70V3579S6DR
    IDT70V3579S6DR-ND
  • Operating Temperature
    0°C ~ 70°C (TA)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Memory Type
    Volatile
  • Memory Size
    1.125Mb (32K x 36)
  • Memory Interface
    Parallel
  • Memory Format
    SRAM
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Detailed Description
    SRAM - Dual Port, Synchronous Memory IC 1.125Mb (32K x 36) Parallel 6ns 208-PQFP (28x28)
  • Base Part Number
    IDT70V3579
  • Access Time
    6ns

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