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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFN66N50Q2
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1472036IXFN66N50Q2 ImageIXYS Corporation

IXFN66N50Q2

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Specifications
  • Part Number
    IXFN66N50Q2
  • Manufacturer/Brand
    IXYS / Littelfuse
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 500V 66A SOT-227B
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IXFN66N50Q2.pdf
  • Vgs(th) (Max) @ Id
    4.5V @ 8mA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SOT-227B
  • Series
    HiPerFET™
  • Rds On (Max) @ Id, Vgs
    80 mOhm @ 500mA, 10V
  • Power Dissipation (Max)
    735W (Tc)
  • Packaging
    Tube
  • Package / Case
    SOT-227-4, miniBLOC
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Chassis Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    6800pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    199nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    500V
  • Detailed Description
    N-Channel 500V 66A (Tc) 735W (Tc) Chassis Mount SOT-227B
  • Current - Continuous Drain (Id) @ 25°C
    66A (Tc)

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