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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFX32N100P
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3871293IXFX32N100P ImageIXYS Corporation

IXFX32N100P

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Reference Price(In US Dollars)

In stock
1+
$19.68
30+
$16.552
120+
$15.21
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Specifications
  • Part Number
    IXFX32N100P
  • Manufacturer/Brand
    IXYS / Littelfuse
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 1000V 32A PLUS247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IXFX32N100P.pdf
  • Vgs(th) (Max) @ Id
    6.5V @ 1mA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PLUS247™-3
  • Series
    HiPerFET™, PolarP2™
  • Rds On (Max) @ Id, Vgs
    320 mOhm @ 16A, 10V
  • Power Dissipation (Max)
    960W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-247-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    24 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    14200pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    225nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    1000V
  • Detailed Description
    N-Channel 1000V 32A (Tc) 960W (Tc) Through Hole PLUS247™-3
  • Current - Continuous Drain (Id) @ 25°C
    32A (Tc)

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