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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFY4N60P3
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IXFY4N60P3

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Reference Price(In US Dollars)

In stock
1+
$1.85
70+
$1.495
140+
$1.346
560+
$1.047
1050+
$0.867
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Specifications
  • Part Number
    IXFY4N60P3
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 4A TO-252
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-252
  • Series
    HiPerFET™, Polar3™
  • Rds On (Max) @ Id, Vgs
    2.2 Ohm @ 2A, 10V
  • Power Dissipation (Max)
    114W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    26 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    365pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    6.9nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 4A (Tc) 114W (Tc) Surface Mount TO-252
  • Current - Continuous Drain (Id) @ 25°C
    4A (Tc)
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