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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTA1N80
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2632978IXTA1N80 ImageIXYS Corporation

IXTA1N80

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Reference Price(In US Dollars)

In stock
50+
$2.30
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Specifications
  • Part Number
    IXTA1N80
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 800V 750MA TO-263
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    4.5V @ 25µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-263 (IXTA)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    11 Ohm @ 500mA, 10V
  • Power Dissipation (Max)
    40W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    220pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    8.5nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    800V
  • Detailed Description
    N-Channel 800V 750mA (Tc) 40W (Tc) Surface Mount TO-263 (IXTA)
  • Current - Continuous Drain (Id) @ 25°C
    750mA (Tc)
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Description: MOSFET N-CH 1200V 1A TO-263

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Description: MOSFET N-CH 1000V 1.6A D2PAK

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Description: MOSFET N-CH 85V 200A TO-263-7

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Description: MOSFET N-CH 75V 200A TO-263-7

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Description: MOSFET N-CH 1000V 1.5A TO-263

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