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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTM11N80
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IXTM11N80

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Specifications
  • Part Number
    IXTM11N80
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    POWER MOSFET TO-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Vgs(th) (Max) @ Id
    4.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-204AA
  • Series
    GigaMOS™
  • Rds On (Max) @ Id, Vgs
    950 mOhm @ 5.5A, 10V
  • Power Dissipation (Max)
    300W (Tc)
  • Package / Case
    TO-204AA, TO-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4500pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    170nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    800V
  • Detailed Description
    N-Channel 800V 11A (Tc) 300W (Tc) Through Hole TO-204AA
  • Current - Continuous Drain (Id) @ 25°C
    11A (Tc)
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