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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTM67N10
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IXTM67N10

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Specifications
  • Part Number
    IXTM67N10
  • Manufacturer/Brand
    IXYS / Littelfuse
  • Stock Quantity
    In stock
  • Description
    POWER MOSFET TO-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IXTM67N10.pdf
  • Vgs(th) (Max) @ Id
    4V @ 4mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-204AE
  • Series
    GigaMOS™
  • Rds On (Max) @ Id, Vgs
    25 mOhm @ 33.5A, 10V
  • Power Dissipation (Max)
    300W (Tc)
  • Package / Case
    TO-204AE
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4500pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    260nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 67A (Tc) 300W (Tc) Through Hole TO-204AE
  • Current - Continuous Drain (Id) @ 25°C
    67A (Tc)

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