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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTP1R6N100D2
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859490IXTP1R6N100D2 ImageIXYS Corporation

IXTP1R6N100D2

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Reference Price(In US Dollars)

In stock
50+
$2.128
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Specifications
  • Part Number
    IXTP1R6N100D2
  • Manufacturer/Brand
    IXYS / Littelfuse
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 1000V 1.6A TO220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IXTP1R6N100D2.pdf
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-220AB
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    10 Ohm @ 800mA, 0V
  • Power Dissipation (Max)
    100W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    24 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    645pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 5V
  • FET Type
    N-Channel
  • FET Feature
    Depletion Mode
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    1000V
  • Detailed Description
    N-Channel 1000V 1.6A (Tc) 100W (Tc) Through Hole TO-220AB
  • Current - Continuous Drain (Id) @ 25°C
    1.6A (Tc)

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