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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTT110N10L2
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3792871IXTT110N10L2 ImageIXYS Corporation

IXTT110N10L2

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Reference Price(In US Dollars)

In stock
1+
$16.57
30+
$13.935
120+
$12.805
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Specifications
  • Part Number
    IXTT110N10L2
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 110A TO-268
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    4.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-268
  • Series
    Linear L2™
  • Rds On (Max) @ Id, Vgs
    18 mOhm @ 55A, 10V
  • Power Dissipation (Max)
    600W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    24 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    10500pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    260nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 110A (Tc) 600W (Tc) Surface Mount TO-268
  • Current - Continuous Drain (Id) @ 25°C
    110A (Tc)
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