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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTY08N100D2
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IXTY08N100D2

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Reference Price(In US Dollars)

In stock
1+
$2.85
70+
$2.30
140+
$2.07
560+
$1.61
1050+
$1.334
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Specifications
  • Part Number
    IXTY08N100D2
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 1000V 800MA DPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    -
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-252, (D-Pak)
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    21 Ohm @ 400mA, 0V
  • Power Dissipation (Max)
    60W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    24 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    325pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    14.6nC @ 5V
  • FET Type
    N-Channel
  • FET Feature
    Depletion Mode
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Drain to Source Voltage (Vdss)
    1000V
  • Detailed Description
    N-Channel 1000V 800mA (Tc) 60W (Tc) Surface Mount TO-252, (D-Pak)
  • Current - Continuous Drain (Id) @ 25°C
    800mA (Tc)
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Description: MOSFET N-CH 1000V 800MA TO-252

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Description: MOSFET N-CH 500V 800MA DPAK

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