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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTY1R4N60P
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IXTY1R4N60P

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Specifications
  • Part Number
    IXTY1R4N60P
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 1.4A D-PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    5.5V @ 25µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-252, (D-Pak)
  • Series
    PolarHV™
  • Rds On (Max) @ Id, Vgs
    9 Ohm @ 700mA, 10V
  • Power Dissipation (Max)
    50W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    140pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    5.2nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 1.4A (Tc) 50W (Tc) Surface Mount TO-252, (D-Pak)
  • Current - Continuous Drain (Id) @ 25°C
    1.4A (Tc)
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Description: MOSFET N-CH 1000V 1.4A TO-252

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Description: MOSFET N-CH 1000V 2A TO-252

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Description: MOSFET N-CH 1200V 1.4A TO-252

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Description: MOSFET P-CH 100V 18A TO-252

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IXTY1R4N60P TRL

IXTY1R4N60P TRL

Description: MOSFET N-CH 600V 1.4A D-PAK

Manufacturers: IXYS Corporation
In stock

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