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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > VWM200-01P
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VWM200-01P

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Specifications
  • Part Number
    VWM200-01P
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET 6N-CH 100V 210A V2
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    4V @ 2mA
  • Supplier Device Package
    V2-PAK
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    5.2 mOhm @ 100A, 10V
  • Power - Max
    -
  • Packaging
    Bulk
  • Package / Case
    V2-PAK
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    -
  • Gate Charge (Qg) (Max) @ Vgs
    430nC @ 10V
  • FET Type
    6 N-Channel (3-Phase Bridge)
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    Mosfet Array 6 N-Channel (3-Phase Bridge) 100V 210A Through Hole V2-PAK
  • Current - Continuous Drain (Id) @ 25°C
    210A
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