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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFT12N100F
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4546974IXFT12N100F ImageIXYS RF

IXFT12N100F

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Reference Price(In US Dollars)

In stock
1+
$13.80
30+
$11.316
120+
$10.212
510+
$8.556
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Specifications
  • Part Number
    IXFT12N100F
  • Manufacturer/Brand
    IXYS RF
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 1000V 12A TO268
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IXFT12N100F.pdf
  • Vgs(th) (Max) @ Id
    5.5V @ 4mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-268 (IXFT)
  • Series
    HiPerRF™
  • Rds On (Max) @ Id, Vgs
    1.05 Ohm @ 6A, 10V
  • Power Dissipation (Max)
    300W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    14 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    2700pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    77nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    1000V
  • Detailed Description
    N-Channel 1000V 12A (Tc) 300W (Tc) Surface Mount TO-268 (IXFT)
  • Current - Continuous Drain (Id) @ 25°C
    12A (Tc)

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