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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSC119N03S G
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1275863BSC119N03S G ImageInternational Rectifier (Infineon Technologies)

BSC119N03S G

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Specifications
  • Part Number
    BSC119N03S G
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 30V 30A TDSON-8
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    2V @ 20µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TDSON-8
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    11.9 mOhm @ 30A, 10V
  • Power Dissipation (Max)
    2.8W (Ta), 43W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-PowerTDFN
  • Other Names
    BSC119N03S G-ND
    BSC119N03SGINTR
    BSC119N03SGXT
    SP000016416
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1370pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    11nC @ 5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    N-Channel 30V 11.9A (Ta), 30A (Tc) 2.8W (Ta), 43W (Tc) Surface Mount PG-TDSON-8
  • Current - Continuous Drain (Id) @ 25°C
    11.9A (Ta), 30A (Tc)
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