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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSC123N10LSGATMA1
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1465496BSC123N10LSGATMA1 ImageInternational Rectifier (Infineon Technologies)

BSC123N10LSGATMA1

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Reference Price(In US Dollars)

In stock
5000+
$0.841
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Specifications
  • Part Number
    BSC123N10LSGATMA1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 71A TDSON-8
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.4V @ 72µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TDSON-8
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    12.3 mOhm @ 50A, 10V
  • Power Dissipation (Max)
    114W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-PowerTDFN
  • Other Names
    BSC123N10LS G
    BSC123N10LS G-ND
    BSC123N10LS GTR
    BSC123N10LS GTR-ND
    BSC123N10LSGATMA1TR
    SP000379612
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4900pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    68nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 10.6A (Ta), 71A (Tc) 114W (Tc) Surface Mount PG-TDSON-8
  • Current - Continuous Drain (Id) @ 25°C
    10.6A (Ta), 71A (Tc)
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