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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSC12DN20NS3GATMA1
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3410703BSC12DN20NS3GATMA1 ImageInternational Rectifier (Infineon Technologies)

BSC12DN20NS3GATMA1

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Reference Price(In US Dollars)

In stock
5000+
$0.545
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Specifications
  • Part Number
    BSC12DN20NS3GATMA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 200V 11.3A 8TDSON
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BSC12DN20NS3GATMA1.pdf
  • Vgs(th) (Max) @ Id
    4V @ 25µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TDSON-8
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    125 mOhm @ 5.7A, 10V
  • Power Dissipation (Max)
    50W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-PowerTDFN
  • Other Names
    BSC12DN20NS3 G
    BSC12DN20NS3G
    BSC12DN20NS3GATMA1TR
    BSC12DN20NS3GTR
    BSC12DN20NS3GTR-ND
    SP000781774
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    680pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    8.7nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    200V
  • Detailed Description
    N-Channel 200V 11.3A (Tc) 50W (Tc) Surface Mount PG-TDSON-8
  • Current - Continuous Drain (Id) @ 25°C
    11.3A (Tc)

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