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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSC16DN25NS3GATMA1
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5627208BSC16DN25NS3GATMA1 ImageInternational Rectifier (Infineon Technologies)

BSC16DN25NS3GATMA1

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Reference Price(In US Dollars)

In stock
1+
$2.08
10+
$1.883
100+
$1.513
500+
$1.177
1000+
$0.975
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Specifications
  • Part Number
    BSC16DN25NS3GATMA1
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 250V 10.9A 8TDSON
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BSC16DN25NS3GATMA1.pdf
  • Vgs(th) (Max) @ Id
    4V @ 32µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TDSON-8
  • Series
    OptiMOS™
  • Rds On (Max) @ Id, Vgs
    165 mOhm @ 5.5A, 10V
  • Power Dissipation (Max)
    62.5W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-PowerTDFN
  • Other Names
    BSC16DN25NS3GATMA1CT
    BSC16DN25NS3GCT
    BSC16DN25NS3GCT-ND
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    920pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    11.4nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    250V
  • Detailed Description
    N-Channel 250V 10.9A (Tc) 62.5W (Tc) Surface Mount PG-TDSON-8
  • Current - Continuous Drain (Id) @ 25°C
    10.9A (Tc)

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