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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SB1239TV2
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6188252SB1239TV2 ImageLAPIS Semiconductor

2SB1239TV2

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Specifications
  • Part Number
    2SB1239TV2
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS PNP DARL 40V 2A ATV
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SB1239TV2.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    40V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 1.2mA, 600mA
  • Transistor Type
    PNP - Darlington
  • Supplier Device Package
    ATV
  • Series
    -
  • Power - Max
    1W
  • Packaging
    Tape & Box (TB)
  • Package / Case
    3-SIP
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor PNP - Darlington 40V 2A 1W Through Hole ATV
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 500mA, 2V
  • Current - Collector Cutoff (Max)
    1µA (ICBO)
  • Current - Collector (Ic) (Max)
    2A

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