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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SCR512PFRAT100
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14784172SCR512PFRAT100 ImageLAPIS Semiconductor

2SCR512PFRAT100

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Reference Price(In US Dollars)

In stock
1+
$0.49
10+
$0.415
25+
$0.363
100+
$0.312
250+
$0.27
500+
$0.228
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Specifications
  • Part Number
    2SCR512PFRAT100
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    NPN DRIVER TRANSISTOR (CORRESPON
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.2SCR512PFRAT100.pdf
    2.2SCR512PFRAT100.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 35mA, 700mA
  • Transistor Type
    NPN
  • Supplier Device Package
    MPT3
  • Series
    Automotive, AEC-Q101
  • Power - Max
    500mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-243AA
  • Other Names
    2SCR512PFRAT100CT
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    7 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    320MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 30V 2A 320MHz 500mW Surface Mount MPT3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 100mA, 2V
  • Current - Collector Cutoff (Max)
    1µA (ICBO)
  • Current - Collector (Ic) (Max)
    2A

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