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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SD1858TV2R
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68690612SD1858TV2R ImageLAPIS Semiconductor

2SD1858TV2R

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Specifications
  • Part Number
    2SD1858TV2R
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 32V 1A ATV
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SD1858TV2R.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    32V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 50mA, 500mA
  • Transistor Type
    NPN
  • Supplier Device Package
    ATV
  • Series
    -
  • Power - Max
    1W
  • Packaging
    Tape & Box (TB)
  • Package / Case
    3-SIP
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    150MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 32V 1A 150MHz 1W Through Hole ATV
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    180 @ 100mA, 3V
  • Current - Collector Cutoff (Max)
    500nA (ICBO)
  • Current - Collector (Ic) (Max)
    1A

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