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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BC848BT116
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1820007BC848BT116 ImageLAPIS Semiconductor

BC848BT116

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Reference Price(In US Dollars)

In stock
3000+
$0.068
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Specifications
  • Part Number
    BC848BT116
  • Manufacturer/Brand
    LAPIS Technology
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 30V 0.1A SST3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.BC848BT116.pdf
    2.BC848BT116.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    30V
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 5mA, 100mA
  • Transistor Type
    NPN
  • Supplier Device Package
    SST3
  • Series
    -
  • Power - Max
    350mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    BC848BMGT116
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    200MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 30V 100mA 200MHz 350mW Surface Mount SST3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 2mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA

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